Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure

被引：6
|
作者：
Wang, Xue-Lun [1 ]
Takahashi, Tokio [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanosyst Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期
基金：
日本学术振兴会;
关键词：
D O I：
10.1143/JJAP.51.040205
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The light source position dependence of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure was investigated using the theoretical simulation and temperature-dependent emission pattern measurements. It was found that the evanescent wave coupling effect could be realized for a light source located at any position of the top-flat quantum well (QWL), although the emissions transformed from evanescent waves began to get emitted in directions that formed an increasingly larger angle with respect to the surface normal of the ridge flat facet when the light source was moved from the center to the edge of the flat QWL. (C) 2012 The Japan Society of Applied Physics
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页数：3
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