Bound polarons in wurtzite GaN/AlxGa1-xN quantum well

The influences of the electron-phonon interaction as well as impurity-phonon interaction including the confined optical phonon mode, interface-optical phonon modes, half-space phonon modes and the anisotropy of the electron effective band mass as well as phonons frequency have been considered to investigate the bound polaron binding energy in wurtzite GaN/AlxGa1-xN quantum well. And the results have been compared with zinc-blende structure. It is found from the numerical result that phonons give the larger negative contribution to the binding energy and the ground state energy of the bound polaron in wurtzite quantum wells. There are obvious contributions of the interaction between the electron and interface-optical phonons as well as half-space phonons for the narrow well, but the total contribution of phonons mainly comes from the confined optical phonon modes for the wide well. The electron-phonon interaction is bigger in wurtzite quantum well than that in zinc-blende quantum well. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim