Optical properties and laser applications of (InGa)As/(AlGa)As self-assembled quantum dots

被引：1
|
作者：
Henini, M [1 ]
Patanè, A
Polimeni, A
Eaves, L
Main, P
Levin, A
Hill, G
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3B期
关键词：
self-assembly; quantum dots; molecular beam epitaxy; photoluminescence; laser;
D O I：
10.1143/JJAP.40.2077
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the photoluminescence and laser properties of (InGa)As/(AlGa)As self-assembled quantum dots (QDs). By varying the Al content in the (AlGa)As matrix and/or stacking several QD layers, the room temperature dot luminescence is tuned over a wavelength range from 0.8 mum to 1.3 mum. In particular, by embedding the (InGa)As QD layer in a GaAs/AlGaAs quantum well, an high temperature light emission from the dots can be obtained (up to 500 K). We also study the properties of QD lasers and show that both cavity effects and thermal coupling between dots play an important role in determining the QD laser emission.
引用
收藏
页码：2077 / 2079
页数：3
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