Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

被引：30
|
作者：
Yakuphanoglu, F. [1 ]
Shah, M. [2 ]
Farooq, W. Aslam [3 ]
机构：
[1] Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey
[2] GIK Inst Engn Sci & Technol, Swabi 23640, Khyber Pakhtunk, Pakistan
[3] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
来源：
ACTA PHYSICA POLONICA A | 2011年 / 120卷 / 03期
关键词：
SCHOTTKY DIODE; CURRENT-VOLTAGE; I-V; POLYMER; PARAMETERS; CONDUCTANCE; EXTRACTION; SILICON;
D O I：
10.12693/APhysPolA.120.558
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current voltage, capacitance voltage and conductance voltage methods. The values of ideality factor and barrier height of the diode were determined from the current voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7.64 x 10(10) cm(-2) eV(-1). The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.
引用
收藏
页码：558 / 562
页数：5
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