High-temperature characterization of high-voltage MOSFETs fabricated in a 0.5μm CMOS process

Temperature characterization results for a set of high-voltage N-channel and P-channel MOSFETs compatible with a 3.3V 0.5 mu m standard CMOS process are presented for temperatures between 27 degrees C-200 degrees C. Threshold voltage, low field mobility, mobility degradation with transverse electric field, and breakdown voltage temperature dependence are extracted using simple empirical functions. The drain current of the NMOS device was found to exhibit Zero-Temperature-Coefficient (ZTC) bias points in the linear and saturation region. No similar behavior was observed for the PMOS which is attributed to a large internal series resistance. Devices exhibit breakdown voltages of 26V for the NMOS and 18V for the PMOS device.