The study of the structure of the electronic states of the FeGa3 and RuGa3 compounds by optical spectroscopy method

被引：6

作者：

Knyazev, Yu. V. ^{[1
]}

Kuz'min, Yu. I. ^{[1
]}

机构：

[1] Russian Acad Sci, Mikheev Inst Met Phys, Ural Branch, Ekaterinburg, Russia

来源：

PHYSICS OF THE SOLID STATE | 2017年 / 59卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

THERMOELECTRIC PROPERTIES; INTERMETALLIC COMPOUNDS; SEMICONDUCTOR;

D O I：

10.1134/S1063783417110154

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Investigations of the optical properties of intermetallic compounds FeGa3 and RuGa3 in the wavelength range of 0.22-14 mu m have been conducted. The spectra of the interband light absorption are interpreted based on comparative analysis of calculated and experimental dispersion dependences of optical conductivity. Experimental data confirm the existence of the energy gaps at the Fermi level with a width of similar to 0.6 eV in the density of states of these materials, which was previously predicted in the band calculations.

引用

页码：2244 / 2247

页数：4

共 50 条

[1] The study of the structure of the electronic states of the FeGa3 and RuGa3 compounds by optical spectroscopy method
Yu. V. Knyazev
Yu. I. Kuz’min
Physics of the Solid State, 2017, 59 : 2244 - 2247
[2] FeGa3 and RuGa3:: Semiconducting intermetallic compounds
Häussermann, U
Boström, M
Viklund, P
Rapp, Ö
Björnängen, T
JOURNAL OF SOLID STATE CHEMISTRY, 2002, 165 (01) : 94 - 99
[3] Thermoelectric properties of semiconducting intermetallic compounds:: FeGa3 and RuGa3
Amagai, Y
Yamamoto, A
Lee, CH
Takazawa, H
Noguchi, T
Obara, H
Iida, T
Takanashi, Y
THERMOELECTRIC MATERIALS 2003-RESEARCH AND APPLICATIONS, 2004, 793 : 345 - 350
[4] Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure
Imai, Y
Watanabe, A
INTERMETALLICS, 2006, 14 (07) : 722 - 728
[5] Crystal growth, electronic structure, and properties of Ni-substituted FeGa3
Likhanov, Maxim S.
Verchenko, Valeriy Yu
Bykov, Mikhail A.
Tsirlin, Alexander A.
Gippius, Andrei A.
Berthebaud, David
Maignan, Antoine
Shevelkov, Andrei V.
JOURNAL OF SOLID STATE CHEMISTRY, 2016, 236 : 166 - 172
[6] Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies
Arita, M.
Shimada, K.
Utsumi, Y.
Morimoto, O.
Sato, H.
Namatame, H.
Taniguchi, M.
Hadano, Y.
Takabatake, T.
PHYSICAL REVIEW B, 2011, 83 (24):
[7] Electronic correlations in FeGa3 and the effect of hole doping on its magnetic properties
Gamza, M. B.
Tomczak, J. M.
Brown, C.
Puri, A.
Kotliar, G.
Aronson, M. C.
PHYSICAL REVIEW B, 2014, 89 (19)
[8] Optical conductivity and vibrational spectra of the narrow-gap semiconductor FeGa3
Martin, C.
Martinez, V. A.
Opacic, M.
Djurdjic-Mijin, S.
Mitric, P.
Umicevic, A.
Poudel, A.
Sydoryk, I.
Ren, Weijun
Martin, R. M.
Tanner, D. B.
Lazarevic, N.
Petrovic, C.
Tanaskovic, D.
PHYSICAL REVIEW B, 2023, 107 (16)
[9] Single Crystal Growth of FeGa3 and FeGa3-xGex from High-Temperature Solution Using the Czochralski Method
Bader, Kristian
Gille, Peter
CRYSTAL RESEARCH AND TECHNOLOGY, 2020, 55 (02)
[10] Variations of the FeGa3 structure type in the systems CoIn3-xZnx and CoGa3-xZnx
Viklund, P
Lidin, S
Berastegui, P
Häussermann, U
JOURNAL OF SOLID STATE CHEMISTRY, 2002, 165 (01) : 100 - 110

← 1 2 3 4 5 →