Emergent plasmonic excitations in Mexican-hat and bell-shaped bands of hybridized Dirac electrons in graphene/topological insulator heterostructures

被引:0
|
作者
Liu, Yujie [1 ,2 ,3 ,4 ]
Wei, Tong [1 ,2 ]
Cui, Ping [1 ,2 ]
Li, Xiaoguang [3 ]
Zhang, Zhenyu [1 ,2 ]
机构
[1] Univ Sci & Technol China, Int Ctr Quantum Design Funct Mat ICQD, Hefei Natl Res Ctr Phys Sci Microscale HFNL, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Ctr Excellence Quantum Informat & Quantum Phy, Hefei 230026, Anhui, Peoples R China
[3] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
基金
中国国家自然科学基金; 国家重点研发计划; 中国博士后科学基金;
关键词
TOTAL-ENERGY CALCULATIONS;
D O I
10.1103/PhysRevB.105.195150
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stacking a graphene monolayer onto a three-dimensional topological insulator results in a van der Waals heterostructure that can serve as a versatile platform for rich emergent exotic physics. In particular, the Dirac electrons of the graphene and that of the two-dimensional surface states of the topological insulator hybridize effectively, leading to the emergence of two distinct electronic bands around the Fermi level, with respective Mexican-hat and bell shapes. In this paper, we explore the emergent collective plasmonic excitations in the representative heterostructure of graphene/Sb2Te3, combining first-principles calculations and low-energy effective Hamiltonian descriptions. We discover two different plasmon modes of the system, and our band-resolved analysis allows us to attribute the two modes to the intraband transitions within the Mexican-hat and bell-shaped bands, respectively. We also analyze the relative strengths and damping rates of the plasmon modes upon variations of the bias potential across the heterojunction, enabling potential experimental detections of those collective excitations. These findings provide alternate avenues for regulating the electronic states and plasmonic excitations in the hybridized Dirac electron systems for potential device applications.
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页数:7
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