Simulation analysis of electron multiplication layer charge collection efficiency in EBCMOS devices

Electron bombardment CMOS devices have the advantages of small size, light weight, and high imaging sensitivity. Studying how to obtain high-gain EBCMOS devices has a profound impact on industries such as low-light night vision technology. In the experiment, we combined Monte-Carlo ideas with the physical model of the interaction between the low-energy electrons and the substrate material, and the movement trajectory and distribution of the electrons in the solid were simulated, which proved the existence of the electron multiplication benefit. In the experiment, the incident electron energy is 4KeV, the incident electron beam diameter is 20nm, the thickness of the passivation layer is 60nm, and the thickness of the p-type epitaxial layer is 10 microns. The electron collection efficiency of the substrate material under unifolin doping is about 46.5%. The maximum theoretical collection efficiency under gradient doping can reach 84%. The research on electron bombardment CMOS devices has certain reference value.