Correlation between high-voltage kink and substrate current in GaAs MESFETs

被引：0
|
作者：
Chan, YJ [1 ]
Huang, JW [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 19期
关键词：
D O I：
10.1049/el:19981294
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The kink effect in GaAs MESFETs has been studied by evaluating ungated substrate current. Through the investigations of different buffer structures and epi-ready wafers from vendors, the authors found that kinks appearing in the high-voltage regime are related to the interface states, which may be associated with the residual impurities in the epi-ready wafers.
引用
收藏
页码：1884 / 1885
页数：2
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