Interference issues in silicon RFIC design

被引：3
|
作者：
Zhang, ZF [1 ]
Pun, A [1 ]
Lau, J [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong
来源：
1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM | 1998年
关键词：
D O I：
10.1109/RFIC.1998.682061
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Traditional noise immunity methodologies used in PCB designs are less effective when applied to RFICs. We present here analyses of both electromagnetic interferences and spiral inductor induced substrate noise in silicon RFICs that can be an impediment in achieving higher integration. In the analysis, we (1) compare the effectiveness of 4 shielding solutions in a triple layer metal technology, (2) contrast the interference on both heavily doped and lightly doped substrates, (3) study the impact of physical separation and geometrical variations, (4) and measure the inductor induced substrate noise on a 0.8 um triple-layer CMOS process.
引用
收藏
页码：119 / 122
页数：4
相关论文
共 50 条
  • [1] Disruptive design solutions for frequency generation in silicon RFIC
    Deval, Yann
    Mazouffre, Olivier
    Majek, Cedric
    Lapuyade, Herve
    Taris, Thierry
    Begueret, Jean-Baptiste
    2005 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: INTEGRATED CIRCUITS FOR WIDEBAND COMMUNICATION AND WIRELESS SENSOR NETWORKS, 2005, : 97 - 100
  • [2] RFIC design for first-pass silicon success
    Wilson, James
    Ismail, Mohammed
    RADIO DESIGN IN NANOMETER TECHNOLOGIES, 2006, : 287 - +
  • [3] Performance Evaluation and Reliability Issues of Junctionless CSG MOSFET for RFIC Design
    Pratap, Yogesh
    Haldar, Subhasis
    Gupta, R. S.
    Gupta, Mridula
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 418 - 425
  • [4] Characterizing and optimizing high Q inductors for RFIC design in silicon processes
    Rotella, F
    Howard, D
    Racanelli, M
    Zampardi, P
    2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 339 - 342
  • [5] Design and Optimisation of Circular and Inductors for Silicon-based RFIC Application
    Ziouche, A.
    Belaroussi, M. T.
    AFRICAN REVIEW OF PHYSICS, 2008, 2 : 98 - 99
  • [6] Preventing RFIC interference issues: a modeling methodology for floorplan development and verification of isolation- and grounding strategies
    Niehof, J.
    van Sinderen, J.
    2011 15TH IEEE WORKSHOP ON SIGNAL PROPAGATION ON INTERCONNECTS (SPI), 2011, : 11 - 13
  • [7] Modeling of high-frequency noise of silicon CMOS transistors for RFIC design
    Antonopoulos, Angelos
    Bucher, Matthias
    Papathanasiou, Kostas
    Makris, Nikolaos
    Mavredakis, Nikolaos
    Sharma, Rupendra Kumar
    Sakalas, Paulius
    Schroter, Michael
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2014, 27 (5-6) : 802 - 811
  • [8] High-isolation bonding pad design for silicon RFIC up to 20 GHz
    Lam, S
    Mok, PKT
    Ko, PK
    Chan, MS
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) : 601 - 603
  • [9] Design of High-Efficiency Millimeter-Wave Microstrip Antennas for Silicon RFIC Applications
    Alhalabi, Ramadan A.
    Rebeiz, Gabriel M.
    2011 IEEE INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION (APSURSI), 2011, : 2055 - 2058
  • [10] Physical layout design optimization of integrated spiral inductors for silicon-based RFIC applications
    Sia, CB
    Ong, BH
    Chan, KW
    Yeo, KS
    Ma, JG
    Do, MA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) : 2559 - 2567
12345