Enhanced Boost Factor for Three-Level Quasi-Switched Boost T-Type Inverter

被引:1
|
作者
Do, Duc-Tri [1 ]
Tran, Vinh-Thanh [1 ]
Nguyen, Minh-Khai [1 ]
机构
[1] Ho Chi Minh City Univ Technol & Educ, Fac Elect & Elect Engn, Ho Chi Minh City 700000, Vietnam
关键词
third harmonic injection; single-stage inverter; shoot-through; three-level inverter; quasi-switched boost; T-type inverter; PWM;
D O I
10.3390/en14133920
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A new modulation strategy has been introduced in this paper in order to enhance the boost factor for the three-level quasi-switched boost T-type inverter (3L-qSBT(2)I). Under this approach, the component rating of power devices is significantly decreased. Moreover, the use of a larger boost factor produces a smaller shoot-through current. This benefit leads to reducing the conduction loss significantly. Furthermore, the neutral voltage unbalance is also considered. The duty cycle of two active switches of a quasi-switched boost (qSB) network is redetermined based on actual capacitor voltages to recovery balance condition. Noted that the boost factor will not be affected by the proposed capacitor voltage balance strategy. The proposed method is taken into account to be compared with other previous studies. The operation principle and overall control strategy for this configuration are also detailed. The simulation and experiment are implemented with the help of PSIM software and laboratory prototype to demonstrate the accuracy of this strategy.
引用
收藏
页数:17
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