New trends in semiconductor detectors

被引:0
|
作者
Roe, S [1 ]
机构
[1] CERN, CH-1211 Geneva, Switzerland
关键词
D O I
10.1142/9789812702951_0008
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The following paper is an overview of recent developments in the development of semiconductor detectors for High Energy Physics. The subjects of discussion address primarily, but not exclusively, the problems of detectors at new high luminosity colliders being considered beyond the LHC at CERN. Experiments at such colliders will likely include a tracking detector at the inner radii (10-50 cm), which will then be exposed to doses of 10(14) to 10(15) n/cm(2) per year. After a brief review of the effects of radiation on traditional solid state tracking detectors, some promising technologies are described to overcome the problems that may be expected.
引用
收藏
页码:107 / 117
页数:11
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