Nano-Silver Pressureless Sintering Technology in Power Module Packaging

被引:4
|
作者
Gao, Lilan [1 ,2 ]
Tian, Xinwei [1 ]
Wu, Chengjin [1 ]
Xing, Yulong [2 ,3 ]
Tan, Yansong [1 ,2 ]
Chen, Xu [4 ]
Lu, Guoquan [5 ]
机构
[1] Tianjin Univ Technol, Tianjin Key Lab Adv Mech Syst Design & Intelligen, Tianjin 300384, Peoples R China
[2] Tianjin Univ f Technol, Nat Demonstrat Ctr Expt Mech & Elect Engn, Tianjin 300384, Peoples R China
[3] Tianjin Yixunyuan New Mat Technol Co LTD, Tianjin 301600, Peoples R China
[4] Tianjin Univ, Sch Chem Engn, Tianjin 300350, Peoples R China
[5] Virginia Polytech Inst & State Univ, Sch Mat Sci & Engn, Blacksburg, VA 24061 USA
基金
中国国家自然科学基金;
关键词
Silver pressureless sintering technology; Chip-level; Substrate-level; Development trend; DIE-ATTACH; MICROSTRUCTURE; TEMPERATURE; RELIABILITY; NANOSILVER;
D O I
10.1109/ICMA54519.2022.9856054
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Power electronics may operate at high temperatures even above 200.C. In recent years, silver sintering technology is being gradually applied in high-temperature power electronic packaging due to its excellent thermal, electrical, and mechanical properties. Compared with early pressure-assisted silver sintering technology, silver pressureless sintering technology can simplify the sintering process and reduce capital investment. Silver sintering technology in chip-level and substrate-level packaging is presented as follows: firstly, the traditional and the state-of-the-art chip-level silver pressureless sintering technologies are reviewed: Secondly, the large-area substrate-level silver pressureless sintering technology is introduced, optimized and verified by experiments. Finally, the challenges and future outlook of silver pressureless sintering technology are summarized.
引用
收藏
页码:1452 / 1456
页数:5
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