Kinetic properties of p-type Mg2Si0.4Sn0.6 solid solutions

被引：6
|
作者：
Fedorov, MI [1 ]
Zaitsev, VK [1 ]
Eremin, IS [1 ]
Gurieva, EA [1 ]
Burkov, AT [1 ]
Konstantinov, PP [1 ]
Vedernikov, MV [1 ]
Samunin, AY [1 ]
Isachenko, GN [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年
关键词：
D O I：
10.1109/ICT.2003.1287467
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
In this paper the results of the study of kinetic properties of the Mg2Si0.4Sn0.6 solid solution are presented. It is shown that it is possible to produce the Mg2Si0.4Sn0.6 solid solution with of p-type with various hole concentration (up to 4 (.) 10(19)cm(-3)). Seebeck and Hall coefficients and electrical conductivity were measured in the temperature range 100 - 800 K. The hole mobility in these solid solutions is lower than that of electrons. Some parameters of valence band are determined.
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收藏
页码：134 / 137
页数：4
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