A 31 pW-to-113 nW Hybrid BJT and CMOS Voltage Reference with 3.6% 36-inaccuracy from 0 C to 170 C for Low -Power High-Temperature IoT Systems

This paper proposes a low-power voltage reference generating 736 mV from 0 'C to 170 'C f'or low-power high -temperature loT sensing systems. Using subthreshold current, a BJT diode develops a process insensitive complementary-to -absolute -temperature voltage, and stacked CMOS transistors compensate the temperature sensitive by adding a proportional -to -absolute -temperature voltage. To maintain a reference voltage at high temperature, the circuit is designed considering pwell-to-deep nwell diode leakage. 76 samples from 3 different wafers, fabricated in a 180 nm process, show a 136 inaccuracy of 3.6% from 0 to 170 C without any trimming. It consumes 31 pW at 27 C and 113 nW at 170 C from 0.9 V supply.