System for deposition of diamond like a-C:H films in Ar-C2H2 plasma with ion beam assistance

被引：1
|
作者：
Lopatin, I. V. [1 ]
Akhmadeev, Yu H. [1 ]
Ignatov, D. Yu [1 ]
Kovalskiy, S. S. [1 ]
Petrikova, E. A. [1 ]
机构：
[1] RAS, SB, IHCE, Tomsk 634055, Russia
来源：
25TH INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY | 2018年 / 387卷
基金：
俄罗斯科学基金会;
关键词：
D O I：
10.1088/1757-899X/387/1/012047
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The paper presents a system which comprises a gas plasma source and an ion source and allows surface treatment of dielectrics due to ion charge compensation by plasma electrons. The ion energy corresponds to the discharge voltage of the ion source. The hardness of a-C:H coatings deposited by the method is up to 40-45 GPa.
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页数：5
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