Investigation of intrinsic and extrinsic defects in solid solution Gd3(Al,Ga)5O12 crystals grown by the Czochralski method

被引:11
|
作者
Komar, Jaroslaw [1 ]
Solarz, Piotr [1 ]
Jezowski, Andrzej [1 ]
Glowacki, Michal [2 ]
Berkowski, Marek [2 ]
Ryba-Romanowski, Witold [1 ]
机构
[1] Polish Acad Sci, Inst Low Temp & Struct Res, Ul Okolna 2, PL-50422 Wroclaw, Poland
[2] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
关键词
Mixed garnets; Laser materials; Rare-earth; Point defects; Color centers; Luminescence; THERMAL-CONDUCTIVITY; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; UP-CONVERSION; ENERGY-LEVELS; LUMINESCENCE; ND; ABSORPTION; SYMMETRY; CENTERS;
D O I
10.1016/j.jallcom.2016.07.139
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Mixed garnet crystals with nominal stoichiometry Gd3Al2.5Ga2.5O12 undoped, single doped with Sm3+, Ho3+, Er3+ and Yb3+ and co-doped with Ho3+ + Yb3+ and Er3+ + Yb3+ were grown by the Czochralski method. Optical spectra and thermal conductivity of obtained single crystal samples were measured and analyzed. Recorded optical absorption spectra revealed that the intensity and spectral characteristics of color centre absorption in the UV region, close to the UV absorption edge of the host, are affected by the type of incorporated rare earth ions. On the other hand, spectral characteristics of stable color centers induced by an intense UV irradiation of crystals depend weakly on the rare earth admixture. Low temperature optical spectra provided the evidence that Sm3+ ions and Er3+ ions occupy at least two different types of sites in this host but Yb3+ ions seem to be located preferentially in identical sites. Thermal conductivity of the crystals at 300 K, weakly affected by incorporated rare earth ions, is comparable to that reported for ordered gallium gadolinium garnet crystals. At cryogenic temperatures, i.e. below ca 80 K, thermal conductivities of the crystals containing rare earth ions are markedly smaller than that of undoped one, however. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:96 / 103
页数:8
相关论文
共 50 条
  • [1] Influence of defects on luminescence properties of Gd3(Al,Ga)5O12:Ce scintillation crystals
    Meng Meng
    Qi Qiang
    He Chong-Jun
    Ding Dong-Zhou
    Zhao Shu-Wen
    Shi Jun-Jie
    Ren Guo-Hao
    ACTA PHYSICA SINICA, 2021, 70 (06)
  • [2] Defects creation in the undoped Gd3(Ga,Al)5O12 single crystals and Ce3+ - doped Gd3(Ga,Al)5O12 single crystals and epitaxial films under irradiation in the Gd3+ - related absorption bands
    Bohacek, P.
    Krasnikov, A.
    Kucera, M.
    Nikl, M.
    Zazubovich, S.
    OPTICAL MATERIALS, 2019, 88 : 601 - 605
  • [3] Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
    Grigorjeva, L.
    Kamada, K.
    Nikl, M.
    Yoshikawa, A.
    Zazubovich, S.
    Zolotarjovs, A.
    OPTICAL MATERIALS, 2018, 75 : 331 - 336
  • [4] Growth and characterization of Ce:Gd3(Al, Ga)5O12 single crystals with various ratio of Ga to Al
    Sato, H.
    Endo, T.
    Usuki, Y.
    Matsueda, T.
    Kamada, K.
    Yoshino, M.
    Yoshikawa, A.
    JOURNAL OF CRYSTAL GROWTH, 2017, 468 : 361 - 364
  • [5] On low-temperature luminescence quenching in Gd3 (Ga,Al)5O12:Ce crystals
    Bohacek, P.
    Krasnikov, A.
    Nikl, M.
    Zazubovich, S.
    Zolotarjovs, A.
    OPTICAL MATERIALS, 2019, 95
  • [6] Growth and scintillation properties of Pr doped Gd3(Ga,Al)5O12 single crystals
    Kamada, Kei
    Yanagida, Takayuki
    Pejchal, Jan
    Nikl, Martin
    Endo, Takanori
    Tsutumi, Kousuke
    Usuki, Yoshiyuki
    Fujimoto, Yutaka
    Fukabori, Akihiro
    Yoshikawa, Akira
    JOURNAL OF CRYSTAL GROWTH, 2012, 352 (01) : 84 - 87
  • [7] Composition Engineering of (Lu,Gd,Tb)3(Al,Ga)5O12:Ce Film/Gd3(Al,Ga)5O12:Ce Substrate Scintillators
    Sidletskiy, Oleg
    Gorbenko, Vitalii
    Zorenko, Tetiana
    Syrotych, Yurii
    Witkiwicz-Lukaszek, Sandra
    Mares, Jiri A.
    Kucerkova, Romana
    Nikl, Martin
    Gerasymov, Iaroslav
    Kurtsev, Daniil
    Fedorov, Alexander
    Zorenko, Yuriy
    CRYSTALS, 2022, 12 (10)
  • [8] Growth and optimization of the scintillation properties of Gd3(Ga,Al)5O12 single crystals for WGI applications
    Kim, Kyoung Jin
    Kamada, Kei
    Usuki, Yoshiyuki
    Yoshida, Eiji
    Shoji, Yasuhiro
    Kang, Han Gyu
    Akamatsu, Go
    Yamaya, Taiga
    Yoshikawa, Akira
    JOURNAL OF CRYSTAL GROWTH, 2025, 652
  • [9] Study on the Solid and Solution Properties of Sc3+ and Al3+ in (Tb, Sc)3 (Sc, Al)5O12 Crystals Grown by the Czochralski Method
    Li, Laichao
    Chen, Tengbo
    Yu, Yuxi
    Zhang, Sa
    Yu, Zhiyang
    CRYSTAL GROWTH & DESIGN, 2023, 23 (08) : 5950 - 5956
  • [10] Crystal Growth and Scintillation Properties of Ce Doped Gd3(Ga,Al)5O12 Single Crystals
    Kamada, Kei
    Yanagida, Takayuki
    Pejchal, Jan
    Nikl, Martin
    Endo, Takanori
    Tsutsumi, Kousuke
    Fujimoto, Yutaka
    Fukabori, Akihiro
    Yoshikawa, Akira
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (05) : 2112 - 2115