Line defects in two-dimensional four-beam interference patterns

被引：17

作者：

Tan, C. ^{[1
]}

Peng, C. S. ^{[1
]}

Petryakov, V. N. ^{[2
]}

Verevkin, Yu K. ^{[2
]}

Zhang, J. ^{[3
]}

Wang, Z. ^{[3
]}

Olaizola, S. M. ^{[4
]}

Berthou, T. ^{[5
]}

Tisserand, S. ^{[5
]}

Pessa, M. ^{[5
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Inst Appl Phys, Novgorod, Russia

[3] Cardiff Univ, Mfg Engn Ctr, Cardiff, S Glam, Wales

[4] Ctr Estudios & Invest Tecn Gipuzkoa, Dept Microelect, San Sebastian, Spain

[5] SILIOS Technol SA, F-13790 Peynier, France

来源：

NEW JOURNAL OF PHYSICS | 2008年 / 10卷

关键词：

D O I：

10.1088/1367-2630/10/2/023023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied laser interference patterns, which consist of line defects on the surface of a GaAs substrate, generated by four-beam interference lithography. The orientation and periodicity of the defects are shown to depend on the configuration of the incident laser beams, while the widths of the defects are modified by varying the beam intensity. Influences of the phase and polarization on the simulated patterns are discussed.

引用

页数：8

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