Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

被引：13
|
作者：
Zhang, Lei [1 ,2 ]
Niu, Pingjuan [1 ]
Li, Yuqiang [1 ]
Song, Minghui [2 ]
Zhang, Jianxin [1 ]
Ning, Pingfan [1 ]
Chen, Peizhuan [1 ,3 ]
机构：
[1] Tianjin Polytech Univ, Tianjin Key Lab Adv Elect Engn & Energy Technol, Sch Elect Engn & Automat, Tianjin 300387, Peoples R China
[2] Tianjin Sanan Optoelect Co LTD, Tianjin 300384, Peoples R China
[3] Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Inst Photoelect, Tianjin 300071, Peoples R China
来源：
AIP ADVANCES | 2017年 / 7卷 / 12期
基金：
中国国家自然科学基金;
关键词：
INGAP;
D O I：
10.1063/1.5006865
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm(2) area under the AM0 spectrum at 25 degrees C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%. (c) 2017 Author(s).
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页数：8
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