机构:
Chinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R China
Liu, Shun-Chang
[1
,2
]
Yang, Yusi
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机构:
Chinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R China
Yang, Yusi
[1
]
Li, Zongbao
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机构:
Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
Zhengzhou Univ, Natl Engn Res Ctr Adv Polymer Proc Technol, Zhengzhou 450002, Henan, Peoples R ChinaChinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R China
Li, Zongbao
[3
,4
]
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机构:
Xue, Ding-Jiang
[1
,2
]
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Hu, Jin-Song
[1
,2
]
机构:
[1] Chinese Acad Sci, Inst Chem, CAS Key Lab Mol Nanostruct & Nanotechnol, BNLMS, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
[4] Zhengzhou Univ, Natl Engn Res Ctr Adv Polymer Proc Technol, Zhengzhou 450002, Henan, Peoples R China
Thin-film solar cells made from non-toxic and earth-abundant materials are needed to substitute the current best-developed absorbers such as cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) due to the toxicity of Cd and scarcity of In and Te. In this aspect, germanium monoselenide (GeSe) satisfies the aforementioned criteria and has recently emerged as a potential replacement. Moreover, GeSe possesses a suitable bandgap of 1.14 eV (optimal for single junction solar cells), high absorption coefficient (>10(5) cm(-1)) at a wavelength close to the absorption onset, high hole mobility (128.6 cm(2) V-1 s(-1)), and simple binary composition with fixed orthorhombic phase at room temperature. This review introduces the properties of GeSe with special emphasis on the material, optical and electrical properties, and then summarizes the recent progress of GeSe-based solar cells. Finally, we give guidance on optimizing GeSe thin-film solar cells to their full performance potential, and provide a brief outlook for the further development of GeSe thin-film solar cells.
机构:
Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Mao, Yuliang
Xu, Congsheng
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机构:
Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xu, Congsheng
Yuan, Jianmei
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机构:
Xiangtan Univ, Sch Math & Computat Sci, Hunan Key Lab Computat & Simulat Sci & Engn, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Yuan, Jianmei
Zhao, Hongquan
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机构:
Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401120, Peoples R ChinaXiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
机构:
Tokki Corporation, R and D Center, 10-1 Shinko-cho, Mitsuke-shi, Niigata 954-0076, JapanTokki Corporation, R and D Center, 10-1 Shinko-cho, Mitsuke-shi, Niigata 954-0076, Japan