Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma

被引：9

作者：

Ui, Akio ^{[1
]}

Hayashi, Hisataka ^{[2
]}

Sakai, Itsuko ^{[2
]}

Kaminatsui, Takeshi ^{[2
]}

Ohiwa, Tokuhisa ^{[2
]}

Yamamoto, Katsumi ^{[3
]}

Kikutani, Keisuke ^{[3
]}

机构：

[1] Toshiba Co Ltd, Mech Syst Lab, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Co Ltd, Ctr Semicond Res & Dev, 800 Yamanoisshinki Cho, Yokaichi, Mie 5128550, Japan

[3] Toshiba Co Ltd, Adv Memory Dev Ctr, 800 Yamanoisshinki Cho, Yokaichi, Mie 5128550, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2016年 / 34卷 / 03期

关键词：

FLUOROCARBON PLASMA; BOMBARDMENT ENERGY; DISCHARGES; DISTRIBUTIONS; SELECTIVITY; PRESSURE;

D O I：

10.1116/1.4943384

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For the precise control of the ion energy in reactive ion etching (RIE), a 1-MHz pulsed-direct current (DC) square-wave-superimposed (p-DCS) 100-MHz radio frequency (RF) capacitively coupled plasma (CCP) is studied and compared with a 13.56-and 100-MHz dual-RF-superimposed (DFS) CCP. The proposed CCP is applied in RIE for sub-32-nm node etching of spun-on-carbon using H2-based gas at 2.66 Pa and 1200W of 100-MHz RF power. A minimum critical dimension shift of 3 nm is achieved at high etch rates in p-DCS CCP using an optimized square-wave voltage of -750 V, compared with a corresponding shift of 9 nm in DFS CCP using 400W of 13.56-MHz RF power. Because the maximum of the ion energy distribution (IED) is controlled by the squarewave voltage and more than 70% of the total ion flux is concentrated in a narrow range around the maximum ion energy, the CCP offers precise control of the IED, which is effective in the RIE of the fine-patterned devices. (C) 2016 American Vacuum Society.

引用

页数：6