Electron-electron interaction and weak localization effects in badly metallic SrRuO3 -: art. no. 052403

被引:0
|
作者
de la Torre, MAL [1 ]
Sefrioui, Z
Arias, D
Varela, M
Villegas, JE
Ballesteros, C
León, C
Santamaría, J
机构
[1] Univ Castilla La Mancha, Dept Fis Aplicada, E-13071 Ciudad Real, Spain
[2] CSIC, Inst Microelect Madrid, Madrid 28760, Spain
[3] Univ Complutense Madrid, Dept Fis Aplicada 3, E-28040 Madrid, Spain
[4] Univ Carlos III Madrid, Dept Fis Aplicada, Madrid 28911, Spain
[5] Univ Complutense Madrid, Dept Fis Mat, E-28040 Madrid, Spain
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 05期
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the effect of light ion irradiation on the low-temperature electrical resistivity of ferromagnetic SrRuO3 thin films. Fresh samples displayed a ferromagnetic transition at T-c similar to 160 K, good metallic behavior (rho (300 K) similar to 400 mu Omega cm, d rho /dT>0) at room temperature, and the low-temperature upturn in the electrical resistivity commonly found in SrRuO3. Badly metallic films, displaying high values of the electrical resistivity (O(1000 mu Omega cm)) and incipient nonmetallic behavior (d rho /dT<0) at low temperature, were obtained by He+ irradiation. For high enough irradiation doses, these samples did not show magnetic order down to the base temperature of our experiments. The temperature dependence of the electric:ll conductivity of virgin and irradiated samples is discussed in terms of a weak localization contribution plus a large electron-electron interaction term. The magnitude of the e(-)-e(-) contribution reflects the enhancement of strong electron correlations in SrRuO3 due to disorder.
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页数:4
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