A high power density, 6W MMIC for Ku/K-band applications

被引：9

作者：

Shimura, T ^{[1
]}

Satoh, T ^{[1
]}

Hasegawa, Y ^{[1
]}

Fukaya, J ^{[1
]}

机构：

[1] Fujitsu Quantum Devices Ltd, Hachioji, Tokyo 1920046, Japan

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 x 3.0 mm(2). The HPA achieved 570 mW output power per 1 mm2 die area. This value is the highest power density at Ku/K/Ka-Band reported to date.

引用

页码：851 / 854

页数：4