Formation of uniform ferrocenyl-terminated monolayer covalently bonded to Si using reaction of hydrogen-terminated Si(111) surface with vinylferrocene/n-decane solution by visible-light excitation
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Sano, Hikaru
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Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, JapanKyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Sano, Hikaru
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Zhao, Mingxiu
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Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, JapanKyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Zhao, Mingxiu
[1
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Kasahara, Daiji
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Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, JapanKyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Kasahara, Daiji
[1
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Murase, Kuniaki
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Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, JapanKyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Murase, Kuniaki
[1
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Ichii, Takashi
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Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, JapanKyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Ichii, Takashi
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Sugimura, Hiroyuki
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Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, JapanKyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Sugimura, Hiroyuki
[1
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机构:
[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Electrochemically active self-assembled monolayers (SAM) have been successfully fabricated with atomicscale uniformity on a silicon (Si)(1 1 1) surface by immobilizing vinylferrocene (VFC) molecules through Si-C covalent bonds. The reaction of VFC with the hydrogen-terminated Si (H-Si)(1 1 1) surface was photochemically promoted by irradiation of visible light on a H-Si(1 1 1) substrate immersed in n-decane solution of VFC. We found that aggregation and polymerization of VFC was avoided when n-decane was used as a solvent. Voltammetric quantification revealed that the surface density of ferrocenyl groups was 1.4 x 10(-10) mol cm(-2), i.e., 11% in substitution rate of Si-H bond. VFC-SAMs were then formed by the optimized preparation method on n-type and p-type Si wafers. VFC-SAM on n-type Si showed positive photo-responsivity, while VFC-SAM on p-type Si showed negative photo-responsivity. (C) 2011 Elsevier Inc. All rights reserved.