Unusual behavior of far-infrared magneto-photoconduction in electric field for n-GaAs near metal-insulator-transition

被引：0

作者：

Kobori, H ^{[1
]}

Inoue, M ^{[1
]}

Fujii, K ^{[1
]}

Ohyama, T ^{[1
]}

机构：

[1] Konan Univ, Fac Sci & Engn, Dept Phys, Kobe, Hyogo, Japan

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

To study the influence of the electric field on the magnetic-field induced metal-insulator-transition, we have carried out far-infrared magneto-photoconductivity measurements in various electric fields for n-GaAs near the metal-insulator transition by use of the far-infrared laser with 119 mu m between 2.0K and 4.2K.

引用

页码：127 / 128

页数：2

共 12 条

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