Integration of block copolymer directed assembly with 193 immersion lithography

被引:26
|
作者
Liu, Chi-Chun [1 ]
Nealey, Paul F. [1 ]
Raub, Alex K. [2 ]
Hakeem, Philip J. [2 ]
Brueck, Steve R. J. [2 ]
Han, Eungnak [3 ]
Gopalan, Padma [3 ]
机构
[1] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
来源
基金
美国国家科学基金会;
关键词
DOMAINS; FILMS;
D O I
10.1116/1.3501348
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An integration scheme of block copolymer directed assembly with 193 nm immersion lithography is presented. It is experimentally shown that a thin silicon nitride film can be used as an antireflective coating (ARC). With such an ARC, directed assembly of a block copolymer (BCP) to triple the feature density of a chemical pattern was demonstrated. A high quality of assembly was obtained over a large area, and pattern transfer feasibility was illustrated. The integration of feature density multiplication via directed assembly of a BCP with 193 nm immersion lithography provided a pattern quality that was comparable with existing double patterning techniques, suggesting that the process could be a promising candidate for extending the use of current 193 immersion lithography tools to higher pattern densities. (c) 2010 American Vacuum Society. [DOI: 10.1116/1.3501348]
引用
收藏
页码:C6B30 / C6B34
页数:5
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