Charge trapping and ac conductivity in Amorphous Silicon Oxide

被引：2
|
作者：
Tarrach, F. [1 ]
Ch'hayder, A. [1 ]
Guermazi, S. [1 ]
机构：
[1] Inst Preparatoire Etud Ingenieurs Sfax, Unite Phys Mat Isolants & Semi Isolants, Sfax 3018, Tunisia
来源：
PROCEEDINGS OF THE JMSM 2008 CONFERENCE | 2009年 / 2卷 / 03期
关键词：
a-SiO2; capacitance; Cole-Cole; mirror method; space charge; CHEMICAL-BOND; SIO2; FILMS;
D O I：
10.1016/j.phpro.2009.11.047
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper we have studied the effect of accelerated thermal ageing on the electrical properties of amorphous silicon oxide films a-SiO2. In order to study the charge trapping phenomenon in this material, we have performed the mirror method using a secondary Electron Microscope (SEM). This method consists to inject a negative space charge in the specimen with a high energy electron beam. Results show that trapped charges increase with thermal ageing time. Dielectric investigations performed in the frequency range between 20 Hz and 1 MHz, showed that the relative permittivity increases with thermal ageing time. The ac conductivity has been found to follow the Jonsher law sigma(ac) alpha omega(n). The decrease of ac conductivity has been interpreted.
引用
收藏
页码：941 / 945
页数：5
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