Characterization and Modeling of NBTI Stress, Recovery, Material Dependence and AC Degradation Using R-D Framework

被引：0

作者：

Mahapatra, S. ^{[1
]}

Islam, A. E. ^{[2
]}

Deora, S. ^{[1
]}

Maheta, V. D. ^{[1
]}

Joshi, K. ^{[1
]}

Alam, M. A. ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[2] Purdue Univ, Sch Elect Engn & Comp Sci, W Lafayette, IN 47904 USA

来源：

2011 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2011年

关键词：

BIAS TEMPERATURE INSTABILITY; COMPREHENSIVE MODEL; P-MOSFETS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Five signatures of NBTI such as strong gate insulator process dependence, universal rate of long-time DC degradation, AC duty cycle dependence, AC frequency independence as well as recovery of degradation after stress have been identified. A model has been proposed using uncorrelated contributions from stress induced generated interface traps, hole trapping in process related pre-existing traps and stress induced generated bulk traps to explain the above features. For optimized devices, NBTI under use condition is shown to be dominated by interface traps, and can be modeled using Reaction-Diffusion model.

引用

页数：7

共 18 条

[1] Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence
Mahapatra, Souvik
Parihar, Narendra
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2020, 20 (01) : 4 - 23
[2] A Critical Re-evaluation of the Usefulness of R-D Framework in Predicting NBTI Stress and Recovery
Mahapatra, S.
Islam, A. E.
Deora, S.
Maheta, V. D.
Joshi, K.
Jain, A.
Alam, M. A.
2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,
[3] A Comprehensive AC/DC NBTI Model: Stress, Recovery, Frequency, Duty Cycle and Process Dependence
Desai, S.
Mukhopadhyay, S.
Goel, N.
Nanaware, N.
Jose, B.
Joshi, K.
Mahapatra, S.
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
[4] The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress
Kim, Gang-Jun
Yoon, Moonjee
Kim, SungHwan
Eo, Myeongkyu
Kim, Shinhyung
You, Taehun
Lee, Namhyun
Kim, Kijin
Pae, Sangwoo
2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
[5] Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs
Mahapatra, S.
Maheta, V. D.
Deora, S.
Kumar, E. N.
Purawat, S.
Olsen, C.
Ahmed, K.
Islam, A. E.
Alam, M. A.
SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, 2009, 19 (02): : 243 - +
[6] A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
Goel, N.
Joshi, K.
Mukhopadhyay, S.
Nanaware, N.
Mahapatra, S.
MICROELECTRONICS RELIABILITY, 2014, 54 (03) : 491 - 519
[7] Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs-Part-II: AC Stress and Recovery
Parihar, Narendra
Southwick, Richard G.
Wang, Miaomiao
Stathis, James H.
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (05) : 1707 - 1713
[8] Compact Modeling of NBTI Replicating AC Stress / Recovery from a Single-shot Long-term DC Measurement
Hosaka, Takumi
Nishizawa, Shinichi
Kishida, Ryo
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2019 IEEE 25TH INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS 2019), 2019, : 305 - 309
[9] Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions
Parihar, Narendra
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (01) : 23 - 30
[10] BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation
Parihar, Narendra
Goel, Nilesh
Mukhopadhyay, Subhadeep
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 392 - 403

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