Damage Patterns in Port-au-Prince during the 2010 Haiti Earthquake

被引:25
|
作者
Rathje, Ellen M. [1 ]
Bachhuber, Jeff [2 ]
Dulberg, Ranon [2 ]
Cox, Brady R. [3 ]
Kottke, Albert [4 ]
Wood, Clinton [3 ]
Green, Russell A. [5 ]
Olson, Scott [6 ]
Wells, Donald [7 ]
Rix, Glenn [8 ]
机构
[1] Univ Texas Austin, Dept Civil Architectural & Environm Engn, Austin, TX 78712 USA
[2] Fugro William Lettis & Associates, Walnut Creek, CA 94596 USA
[3] Univ Arkansas, Dept Civil Engn, Fayetteville, AR 72701 USA
[4] Univ Calif Berkeley, Pacific Earthquake Engn Ctr, Berkeley, CA 94720 USA
[5] Virginia Tech, Dept Civil & Environm Engn, Blacksburg, VA 24061 USA
[6] Univ Illinois, Dept Civil & Environm Engn, Newmark Civil Engn Lab 2230D, Urbana, IL 61801 USA
[7] AMEC Geomatrix, Oakland, CA 94612 USA
[8] Georgia Inst Technol, Dept Civil & Environm Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
earthquake engineering; elastic waves; geotechnical engineering; soil; velocity measurement;
D O I
10.1193/1.3637056
中图分类号
TU [建筑科学];
学科分类号
0813 ;
摘要
The 2010 Haiti earthquake represents one of the most devastating earthquakes in history. Damage to structures was widespread across the city of Port-au-Prince, but its intensity varied considerably from neighborhood to neighborhood. This paper integrates damage statistics with geologic data, shear wave velocity measurements, and topographic information to investigate the influence of these conditions on the damage patterns in the city. The results indicate that the most heavily damaged areas in downtown Port-au-Prince are underlain by Holocene alluvium with shear wave velocities that average about 350 m/s over the top 30 m. The remainder of Port-au-Prince is underlain mostly by older geologic units with higher shear wave velocities. Damage was also concentrated on hillsides around Port-au-Prince. These pockets of damage appear to have been caused by a combination of factors, including topographic amplification, soil amplification, and failure of weakly cemented, steep hillsides. [DOI:10.1193/1.3637056]
引用
收藏
页码:S117 / S136
页数:20
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