Synthesis and characterization of cubic boron nitride films: substrate bias and ion flux effects

被引：7
|
作者：
Li, Q
Zhou, ZF
Lee, CS
Lee, ST
Bello, I [1 ]
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, COSDAF, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2001年 / 10卷 / 9-10期
关键词：
cubic boron nitride; magnetron sputtering; ion flux; ion to deposited atom ratio;
D O I：
10.1016/S0925-9635(01)00425-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cubic boron nitride (c-BN) thin films have been synthesized by radio frequency (RF) magnetron sputtering using a hexagonal boron nitride (h-BN) target. In addition to the substrate bias, the distance between the target and the silicon substrate was found to have a significant effect on the formation and volume fraction of the cubic phase in boron nitride films. The increase in ion energy above a certain threshold, corresponding to a substrate bias of -450 V, led to the reduction of the cubic phase content and produced a non-stoichiometric boron nitride structure characteristic of boron-boron bonding. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1886 / 1891
页数：6
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