Excitations in doped quantum dot driven by linear and non-linear drift of impurity

被引：10

作者：

Datta, Nirmal Kumar ^{[3
]}

Chatterjee, Kashinath ^{[2
]}

Ghosh, Manas ^{[1
]}

机构：

[1] Visva Bharati Univ, Dept Chem, Chem Phys Sect, Birbhum 731235, W Bengal, India

[2] Visva Bharati Univ, Dept Stat, Birbhum 731235, W Bengal, India

[3] Suri Vidyasagar Coll, Dept Phys, Birbhum 731101, W Bengal, India

来源：

SOLID STATE SCIENCES | 2011年 / 13卷 / 08期

关键词：

Quantum dot; Impurity drift; Impurity domain; Excitation rate; SHALLOW-DONOR STATES; CONFINEMENT; PHOTOLUMINESCENCE; DIFFUSION; DIAMOND; CENTERS; SHAPE;

D O I：

10.1016/j.solidstatesciences.2011.05.016

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

We explore the excitation profile of a repulsive impurity doped quantum dot induced by linear and non-linear drift of the dopant location. We have considered Gaussian impurity centers. The investigation reveals the roles subtly played by the region of influence of the dopant in conjunction with the mode of dopant propagation to modulate the excitation pattern. The investigation also reveals a change in the relative dominance of various factors in influencing the excitation rate associated with a change in the mode of dopant shift. (C) 2011 Elsevier Masson SAS. All rights reserved.

引用

页码：1531 / 1537

页数：7

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