Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift

被引：0

作者：

Degoli, E ^{[1
]}

Cantele, G ^{[1
]}

Luppi, E ^{[1
]}

Magri, R ^{[1
]}

Ossicini, S ^{[1
]}

Ninno, D ^{[1
]}

Bisi, O ^{[1
]}

Onida, G ^{[1
]}

Gatti, M ^{[1
]}

Incze, A ^{[1
]}

Pulci, O ^{[1
]}

Del Sole, R ^{[1
]}

机构：

[1] INFM S3, Reggio Emilia, Italy

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.

引用

页码：859 / 860

页数：2

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