New modeling of the power diode using the VHDL-AMS language

被引：5
|
作者：
Najjari, M. [1 ]
Mnif, H. [1 ]
Samet, H. [1 ]
Masmoudi, N. [1 ]
机构：
[1] Ecole Natl Ingn Sfax, Lab Elect & Informat Technol, Sfax 3038, Tunisia
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2008年 / 41卷 / 01期
关键词：
D O I：
10.1051/epjap:2007176
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and veri. cation purposes. Simulation relies on component models and associated parameters. This paper focuses on an implementation of a physic-based analytical PIN diode model [ Power Electron. 8, 342 ( 1993)] with the very high description language VHDL-AMS [2]. The Lumped Charge (LC) concept of Linvill is employed. The state-of-art of parameter extraction methods is briefly recalled and a step-by-step extraction procedure for the model parameters is described. Due to poor agreement between simulation results and experimental data, an improvement is added to the model. Finally, our improved model is validated with a confrontation of the simulated and the experimental curves for both current and voltage at different range of the operating conditions. All this operation was made under the Free version of the "SIMPLORER (c)-SV 7.0" environment.
引用
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页码：1 / 11
页数：11
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