Electrical Properties of Undoped Zinc Oxide Nanostructures At Different Annealing Temperature

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 degrees C, 450 degrees C, 500 degrees C, and 550 degrees C. Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 degrees C which its resistivity is 5.36 x 10(4) Omega cm(-1). The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (> 800nm) range but exhibit high absorption in the UV range.