Photoluminescence of colloidal CdSe/ZnS quantum dots under oxygen atmosphere

被引：51

作者：

Shu, GW ^{[1
]}

Lee, WZ

Shu, IJ

Shen, JL

Lin, JCA

Chang, WH

Ruaan, RC

Chou, WC

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[2] Chung Yuan Christian Univ, Dept Biomed Engn, Chungli 32023, Taiwan

[3] Natl Cent Univ, Dept Chem & Mat Engn, Chungli 32023, Taiwan

[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2005年 / 4卷 / 05期

关键词：

optical properties; quantum dots (QDs);

D O I：

10.1109/TNANO.2005.851445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of oxygen versus vacuum ambients on colloidal CdSe/ZnS quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The PL intensities were found to be an order of magnitude higher in an oxygen atmosphere, which is explained by the passivation of surface defects by oxygen absorption. The decay of PL intensities can be best fitted by a biexponential function with lifetimes of approximately 1 ns; for the fast decay and approximately 10 ns; for the slow decay. Based on the emission-energy dependence of carrier lifetimes and of the amplitude ratio of the fast-decay component to the slow-decay component, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs is caused by the recombination of delocalized carriers in the internal core states and the localized carriers in the surface states, respectively.

引用

页码：632 / 636

页数：5

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