MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications

被引：1

作者：

Selvaraj, S. Lawrence ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

HETEROSIC & WASMPE 2011 | 2012年 / 711卷

关键词：

AlGaN/GaN; HEMT; MOCVD; breakdown voltage; breakdown field; buffer leakage; substrate leakage; compressive strain; wafer bowing; figure of merit; DOPED GAN; BUFFER; HEMTS;

D O I：

10.4028/www.scientific.net/MSF.711.195

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extensive study on the use of Si as a substrate for the growth of AlGaN/GaN layers for High-Electron-Mobility Transistor (HEMT) were studied and reported in this article. We have used thick buffers to grow high resistive i-GaN by MOCVD which offers a high breakdown voltage. While the leakage through buffer and substrate can be controlled by thick buffer, the leakage through gate is controlled using a thin 2-nm in-situ grown i-GaN cap layer. We have evidenced a high figure of merit (Bv(2)/R-ON) of 2.6 x 10(8) V-2 Omega(-1)cm(-2) for AlGaN/GaN HEMTs grown on 4-inch Si substrate. The challenges before the MOCVD growth of GaN on Si is also discussed in detail.

引用

页码：195 / 202

页数：8

共 50 条

[1] GaN MESFETs on (111) Si substrate grown by MOCVD
Egawa, T
Nakada, N
Ishikawa, H
Umeno, M
[J]. ELECTRONICS LETTERS, 2000, 36 (21) : 1816 - 1818
[2] AlGaN/GaN heterostructure grown on 1°-tilt sapphire substrate by MOCVD
Lam, K. T.
Yu, C. L.
Chang, P. C.
Liaw, U. H.
Chang, S. J.
Lin, J. C.
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2008, 43 (03) : 147 - 152
[3] Study on AlGaN/GaN heterostructures grown on Si substrate
Egawa T.
[J]. Journal of the Vacuum Society of Japan, 2011, 54 (06) : 381 - 385
[4] Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD
Iwami, Masayuki
Kato, Sadahiro
Satoh, Yoshihiro
Sasaki, Hitoshi
Yoshida, Seikoh
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2658 - +
[5] Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
Altuntas, Philippe
Lecourt, Francois
Cutivet, Adrien
Defrance, Nicolas
Okada, Etienne
Lesecq, Marie
Rennesson, Stephanie
Agboton, Alain
Cordier, Yvon
Hoel, Virginie
De Jaeger, Jean-Claude
[J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) : 303 - 305
[6] High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications.
Moret, M
Ruffenach, S
Briot, O
Gil, B
Aulombard, RL
[J]. NEW APPLICATIONS FOR WIDE-BANDGAP SEMICONDUCTORS, 2003, 764 : 233 - 238
[7] Optical characteristics of the AlGaN/GaN/AlGaN waveguide grown on (111)Si substrate
Kim, H
Kim, KH
Yang, M
Ain, HS
Yi, SN
Narita, T
Honda, Y
Yamaguchi, M
Sawaki, N
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S622 - S624
[8] Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
Elwaradi, R.
Frayssinet, E.
Chenot, S.
Bouyer, Y.
Nemoz, M.
Cordier, Y.
[J]. MICROELECTRONIC ENGINEERING, 2023, 277
[9] MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
Matsuura, Haruka
Onuma, Takeyoshi
Sumiya, Masatomo
Yamaguchi, Tomohiro
Ren, Bing
Liao, Meiyong
Honda, Tohru
Sang, Liwen
[J]. APPLIED SCIENCES-BASEL, 2019, 9 (09):
[10] Characterization of AlGaN on GaN template grown by MOCVD
Yan, Jianchang
Wang, Junxi
Liu, Naixin
Liu, Zhe
Li, Jinmin
[J]. SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841

← 1 2 3 4 5 →