Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing

被引：5
|
作者：
Yoon, Jisoo [1 ]
Kwon, Hyug Su [1 ]
Choi, Woo Young [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul 04107, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
Multi-layer; nano-electromechanical (NEM) memory switch; monolithic three-dimensional (M3D); reconfigurable; RECONFIGURABLE LOGIC;
D O I：
10.1109/LED.2021.3130579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic three-dimensional (M3D) multilayer nanoelectromechanical (NEM) memory switches are experimentally demonstrated for reconfigurable multi-path routing. The multi-layer NEM memory switch has moving mechanical beams in different metal layers which operate independently in a nonvolatile manner, including high impedance states. For example, double-layer NEM memory switches implement nine different memory states. It is predicted that our proposed n-layer NEM memory switches utilizing n metal layers will exhibit 3((n-1)) x higher routing flexibility and nx higher chip density than conventional single-layer NEM memory switches.
引用
收藏
页码：162 / 165
页数：4
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