Single-electron transitions in one-dimensional native nanostructures

被引：4

作者：

Reiche, M. ^{[1
]}

Kittler, M. ^{[2
]}

Schmelz, M. ^{[3
]}

Stolz, R. ^{[3
]}

Pippel, E. ^{[1
]}

Uebensee, H. ^{[4
]}

Kermann, M. ^{[4
]}

Ortlepp, T. ^{[4
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] BTU CS, JointLab IHP BTU, Cottbus, Germany

[3] Leibniz Inst Photon Technol, Jena, Germany

[4] CIS Res Inst Microsensor & Photovolta, Erfurt, Germany

来源：

27TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT27), PTS 1-5 | 2014年 / 568卷

关键词：

SILICON NANOWIRES; OSCILLATIONS; SYSTEM;

D O I：

10.1088/1742-6596/568/5/052024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades.

引用

页数：5

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