Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping

被引：0

作者：

Schanovsky, Franz ^{[1
]}

Goes, Wolfgang ^{[1
]}

Grasser, Tibor ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, Gusshausstr 27-29-E360, A-1040 Vienna, Austria

来源：

2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年

关键词：

RECOMBINATION; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Within the theory of non-radiative multi phonon (NMP) transitions the reaction rate for an electronic transition is proportional to the product of the corresponding electronic matrix element and the line-shape function. The theory is discussed for the case of oxide traps in MOS structures. A simple method for the calculation of reaction rates for atomistic models is derived from approximations to the NMP theory. This method is applied to two selected model defects in the context of negative bias temperature instability (NBTI).

引用

页码：163 / 166

页数：4

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