Negative-ion sources for modification of materials

被引:49
|
作者
Ishikawa, J
机构
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 1996年 / 67卷 / 03期
关键词
D O I
10.1063/1.1146682
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The properties of negative ions, such as charging-free ion implantation and new materials syntheses by pure kinetic bonding reaction, have been shown to be promising in terms of their interaction with material surfaces. However, high-current or high-brightness negative-ion sources are required for these purposes. Several kinds of sputter-type negative-ion sources have been developed for negative-ion implantation and deposition in order to obtain high-current heavy negative ions. Recently, a microwave discharge oxygen negative-ion source for negative-ion beam deposition and a surface plasma type hydrogen negative-ion source for projection ion-beam lithography have been investigated. In this article, these negative-ion sources for modification of materials are reviewed. (C) 1996 American Institute of Physics.
引用
收藏
页码:1410 / 1415
页数:6
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