Heavy Ion SEE Studies on 4-Gbit NAND-Flash Memories

被引：0
|
作者：
Schmidt, H. [1 ]
Walter, D. [1 ]
Brueggemann, M. [1 ]
Gliem, F. [1 ]
Harboe-Sorensen, R. [2 ]
Virtanen, A. [3 ]
机构：
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Datentech & Kommunikat Netze, IDA, D-38092 Braunschweig, Germany
[2] European Space Agcy, Estec, NL-2200 AG Noordwijk, Netherlands
[3] Univ Jyvaskyla, Dept Phys, FI-40014 Jyvaskyla, Finland
来源：
RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 2007年
关键词：
Floating Gate memories; Radiation effects; Heavy-Ion;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavy ion SEE studies on three 4-Gbit NAND-Flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.
引用
收藏
页码：632 / +
页数：2
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