Determination of the optimal thickness of inserted LiF in bilayer organic light-emitting devices

被引:6
|
作者
Li, Hong-Jian [1 ]
Zhu, Ru-Hui [1 ]
Li, Xue-Yong [1 ]
Wang, Zhi-Jun [1 ]
Yang, Bing-Chu [1 ]
机构
[1] Cent S Univ, Coll Phys Sci & Technol, Changsha 410083, Peoples R China
关键词
Ag/LiF; bilayer organic light-emitting devices; optimal thickness;
D O I
10.1016/j.ssc.2007.09.018
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An analytical model to calculate the current-voltage characteristics and the electroluminescence (EL) efficiency of bilayer organic light-emitting devices (OLEDs), considering the influence of introducing a LiF insulating buffer layer at the metal/organic interface on the barrier height for electron injection, is presented. The optimal thickness of inserted LiF in bilayer organic light-emitting devices has been calculated and discussed. According to the J-V curves, the calculated optimal thickness of the LiF layer for OLEDs with a Ag/LiF cathode is about 3.1 nm; The calculated EL efficiency reaches the maximum at L-d = 3.1 mu; When the electron injection barrier achieves its minimum value, L-dopt approximate to 2.95 nm. These results indicate that: for devices with a LiF/Ag cathode, the optimal thickness of inserted LiF should be about 3.0 nm; a too thick or too thin LiF layer will increase the turn-on voltage of the OLED and decrease its performance. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:445 / 449
页数:5
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