CeB6 thin films produced on different substrates by electron-beam deposition

被引：2

作者：

Kuzanyan, A. A. ^{[1
]}

Kuzanyan, A. S. ^{[1
]}

Badalyan, G. R. ^{[1
]}

Petrosyan, S. I. ^{[1
]}

Vardanyan, V. O. ^{[1
]}

Gurin, V. N. ^{[2
]}

Volkov, M. P. ^{[2
]}

Pilosyan, S. Kh. ^{[3
]}

机构：

[1] Natl Acad Sci Armenia, Inst Phys Res, Ashtarak 0203, Armenia

[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2017年 / 51卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782617080176

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Films of cerium hexaboride, a material promising for use in thermoelectric devices at liquidhelium temperatures, are produced by electron-beam deposition. Deposition is carried out from ceramic targets onto insulator, semiconductor, and metal substrates at different temperatures. The microstructure, the elemental and phase compositions, the temperature dependences of the resistivity and the Seebeck coefficient are thoroughly studied. CaB6-structured films, for which the structure is characteristic of cerium hexaboride and the elemental composition is close to the stoichiometric composition, are obtained. At low temperatures, the resistivity of the films is somewhat higher than that of single-crystal samples, and the Seebeck coefficient is close to the corresponding coefficient for single-crystal samples. The main cause of the difference between the resistance values is a high concentration of oxygen impurity detected in the films.

引用

页码：999 / 1001

页数：3

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