ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

被引：7
|
作者：
Benfdila, A. [2 ,3 ]
Abbas, S. [2 ]
Izquierdo, R. [4 ]
Talmat, R. [2 ]
Vaseashta, A. [1 ]
机构：
[1] NUARI, Inst Adv Sci Convergence, Herndon, VA 20171 USA
[2] Univ M Mammeri, LMPDS, Fac Elect Engn & Comp Sci, Tizi Ouzou, Algeria
[3] UNESCO IAEA, Abdus Salam ICTP, Trieste, Italy
[4] UQAM Univ, Microelect Res Grp, Montreal, PQ, Canada
来源：
NANO | 2010年 / 5卷 / 03期
关键词：
CNFET; ballistic transport; CNT; saturation regime;
D O I：
10.1142/S1793292010002062
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current-voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current-voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si-MOSFET behavior in the saturation region.
引用
收藏
页码：161 / 165
页数：5
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