Sol-gel broadband anti-reflective single-layer silica films with high laser damage threshold

被引:26
|
作者
Yao, X [1 ]
Bing, Z [1 ]
Wen, HF [1 ]
Dong, W [1 ]
Yu, HS [1 ]
机构
[1] Chinese Acad Sci, Inst Coal Chem, State Key Lab Coal Convers, Taiyuan 030001, Shanxi, Peoples R China
关键词
silicon oxide; optical coatings; radiation damage; laser irradiation;
D O I
10.1016/S0040-6090(03)00828-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple processing of preparing broadband anti-reflective single-layer silica films is presented in this article. By adding polyvinylpyrrolidone (PVP) into reactant mixture, PVP-containing SiO2 sol was obtained under base catalyzed hydrolysis and condensation of tetraethoxysilane. The spin-coating films and the dip-coating films were deposited on one side and two sides of quartz substrates. The anti-reflection band is 315 nm wide for dip-coating film and 559 nm wide for spin-coating film and the transmittance reached to 99.95 and 95.92% for dip-coating film and spin-coating film, respectively. By a Nd:YAG lasers the laser damage threshold of as-deposited films was measured at 1064 nm wavelength (1 ns pulse). It ranged from 24 to 33 J/cm(2) with an average of 28.7 J/cm(2). Compared to SiO2 sol without PVP not only was the anti-reflection band broadened but the antireflection and laser damage threshold were retained. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:180 / 183
页数:4
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