Ring-patterned plasmonic photonic crystal thermal light source for miniaturized near-infrared spectrometers

被引:2
|
作者
Labib, Shady R. [1 ]
Elsayed, Ahmed A. [1 ]
Sabry, Yasser M. [1 ,2 ]
Khalil, Diaa [1 ,2 ]
机构
[1] Ain Shams Univ, Fac Engn, 1 Elsarayat St, Cairo, Egypt
[2] Si Ware Syst, 3 Khalid Ibn Al Waleed St, Cairo, Egypt
来源
SILICON PHOTONICS XIII | 2018年 / 10537卷
关键词
Plasmonic photonic crystals; Blackbody radiation; Integrated IR source; Spectroscopy; COUPLED-WAVE METHOD;
D O I
10.1117/12.2288988
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
There is a growing number of spectroscopy applications in the near-infrared (NIR) range including gas sensing, food analysis, pharmaceutical and industrial applications that requires highly efficient, more compact and low-cost miniaturized spectrometers. One of the key components for such systems is the wideband light source that can be fabricated using Silicon technology and hence integrated with other components on the same chip. In this work, we report a ring-patterned plasmonic photonic crystal (PC) thermal light source for miniaturized near-infrared spectrometers. The design is based on silicon and tuned to achieve wavelength selectivity in the emitted spectrum. The design is optimized by using Rigorous Coupled-Wave Analysis (RCWA) simulation, which is used to compute the power reflectance and transmittance that are used to predict the emissivity of the structure. The design consists of a PC of silicon rings coated with platinum. The period of the structure is about 2 mu m and the silicon is highly-doped with ntype doping level in the order of 10(19) -10(20) cm(-3) to enhance the free-carrier absorption. The ring etching depth, diameter and shell thickness are optimized to increase its emissivity within a specific wavelength range of interest. The simulation results show an emissivity exceeding 0.9 in the NIR range up to 2.5 mu m, while the emissivity is decreased significantly for longer wavelengths suppressing the emission out of the range of interest, and hence increasing the efficiency for the source. The reported results open the door for black body radiation engineering in integrated silicon sources for spectrometer miniaturization.
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页数:7
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