InGaP/InGaAs double delta-doped channel transistor

被引：5
|
作者：
Chuang, HM
Cheng, SY
Liao, XD
Chen, CY
Liu, WC
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Oriental Inst Technol, Dept Elect Engn, Taipei 220, Taiwan
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 13期
关键词：
D O I：
10.1049/el:20030660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new InGaP/InGaAs double delta-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.
引用
收藏
页码：1016 / 1018
页数：3
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