Spectroscopic Assessment of Charge-Carrier Mobility in Crystalline Organic Semiconductors

被引:0
|
作者
Kharlanov, Oleg G. [1 ,2 ]
Maslennikov, Dmitry R. [1 ,2 ]
Feldman, Elizaveta V. [1 ]
Abashev, George G. [3 ,4 ]
Borshchev, Oleg V. [5 ]
Ponomarenko, Sergey A. [5 ]
Vener, Mikhail V. [2 ,6 ,7 ]
Paraschuk, Dmitry Yu. [1 ,2 ]
Sosorev, Andrey Yu. [1 ,2 ,8 ]
机构
[1] Lomonosov Moscow State Univ, Fac Phys, Leninskie Gory 1-2, Moscow 119991, Russia
[2] Russian Acad Sci, Inst Spect, Fizicheskaya St 5, Moscow 108840, Russia
[3] Perm State Natl Res Univ, Fac Chem, Bukireva St 15, Perm 614990, Russia
[4] Russian Acad Sci, Inst Tech Chem, Ural Branch, Ac Koroleva St 3, Perm 614013, Russia
[5] Russian Acad Sci, Enikolopov Inst Synthet Polymer Mat, Profsoyuznaya St 70, Moscow 117393, Russia
[6] Mendeleev Univ Chem Technol Russia, Dept Quantum Chem, Miusskaya Sq 9, Moscow 125047, Russia
[7] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Prosp 31, Moscow 119991, Russia
[8] Russian Acad Sci, Shemyakin Ovchinnikov Inst Bioorgan Chem, Miklukho Maklaya St 16-10, Moscow 117997, Russia
基金
俄罗斯科学基金会; 俄罗斯基础研究基金会;
关键词
charge transport; dynamic disorder; electron-phonon interaction; organic electronics; Raman spectroscopy; VIBRATIONAL SPECTROSCOPY; ELECTRON-TRANSPORT; HIGH-PERFORMANCE; THIOPHENE; TRANSISTORS; DISORDER; DELOCALIZATION; LOCALIZATION; DERIVATIVES; NAPHTHALENE;
D O I
10.1002/aelm.202100579
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Further progress in organic electronics demands new highly efficient organic semiconductor (OS) materials. So far, however, band-like charge transport with high mobilities has been reliably demonstrated only in a few OSs, and development of efficient methods for search of high-mobility materials among a plethora of OSs remains extremely important. In the present work, a spectroscopic method is presented for screening of crystalline OSs with efficient charge transport, to be used prior to time-consuming device measurements. Specifically, the work focuses on a physical rationale and an experimental benchmark of a correlation between the intensities of the low-frequency Raman spectrum and the strength of dynamic disorder limiting the charge-carrier mobility in a material. As a result, two physics-inspired spectroscopic descriptors for charge-carrier mobility estimation are suggested, both of which clearly correlate with device mobilities reported for various crystalline OSs. It is anticipated that the spectroscopic method based on these descriptors can serve as a powerful search tool for revealing new high-mobility OS materials.
引用
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页数:12
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