A clarification of optical transition of beta-FeSi2 film

被引：4
|
作者：
Wang, LW
Lin, CL
Chen, XD
Zou, SC
Qin, LH
Shi, HT
Shen, WZ
Ostling, M
机构：
[1] NANJING UNIV,DEPT PHYS,NANJING 210093,PEOPLES R CHINA
[2] ACAD SINICA,SHANGHAI INST TECH PHYS,NATL LAB INFRARED PHYS,SHANGHAI 200083,PEOPLES R CHINA
[3] ROYAL INST TECHNOL,S-16440 KISTA,SWEDEN
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 05期
关键词：
optical transition; beta-FeSi2; film; photoreflectance; absorption; photocurrent;
D O I：
10.1016/0038-1098(95)00659-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Highly oriented beta-FeSi2 film on Si(111) was prepared by reactive deposition solid phase epitaxy. Photoreflectance measurements have been carried out near the absorption edge at room temperature. The exact direct transition has been determined at E(g)=0.871 eV. Photocurrent spectra of the sample indicated that the surface recombination velocity becomes very small due to the improvement of crystal quality.
引用
收藏
页码：385 / 388
页数：4
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