Optoelectronics of Cu2+-Doped TiO2 Films Prepared by Sol-Gel Method

被引：0
|
作者：
Rai, S. [1 ]
Dihingia, Pranab J. [2 ]
机构：
[1] Mizoram Univ, Dept Phys, Aizawl 796004, Mizoram, India
[2] Dibrugarh Univ, Dept Phys, Dibrugarh 786004, Assam, India
来源：
ADVANCES IN OPTICAL SCIENCE AND ENGINEERING | 2015年 / 166卷
关键词：
D O I：
10.1007/978-81-322-2367-2_72
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Both undoped and Cu2+-doped TiO2 films have been prepared by sol-gel dip-coating method and characterized by UV-Vis, FTIR, and PL spectroscopy. Also, SEM images of the prepared films were to taken to analyze the surface morphology. Finally, the optoelectronic characterization of the prepared Cu2+-doped films have been performed using I-V measurements under two different light conditions. The surface plasmon resonance (SPR) bands of copper have been observed between 500 and 600 nm. Also, the variation of current under white light illumination was found to much more prominent at a particular voltage than that of dark current.
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收藏
页码：581 / 589
页数：9
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